|  | 規(guī)格型號(hào) | RY91N071A3 | 
            
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              | 產(chǎn)品參數(shù) | 電壓:71V,電流:90A,Vgs:10V,Rds:6.8Ω | 
            
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              | 產(chǎn)品品牌 | 日月辰 | 產(chǎn)品封裝 | TO-263 | 
            
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              | 詳細(xì)說(shuō)明 |  |  |  | 
          
          
          RY91N071A3 TO-263封裝
	Description
	This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.
	Features
	1) VDS=71V,ID=90A,RDS(ON)<6.8mΩ@VGS=10V
	2) Low gate charge.
	3) Green device available.
	4) Advanced high cell denity trench technology for ultra RDS(ON). 
	5) Excellent package for good heat dissipation.
	 
	
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